E. Nurfani, M.A.K. Purbayanto, R. Akutsu, M.A. Naradipa, L.J. Diguna, M.D. Birowosuto, K. Takase, A. Rusydi, Y. Darma
The effects of Sn doping, deposition temperature, and post-annealing treatment on the excitonic behavior of ZnO:Sn (SZO) thin films deposited by dc-unbalanced magnetron sputtering have been studied. Sn doping induces the decrease of grain size and promotes the formation of oxygen vacancy-related trap states as indicated by A1 LO mode in Raman spectra and green emission in photoluminescence spectra. Using a critical point analysis of the dielectric functions from spectroscopic ellipsometry data analysis, Sn doping blueshifts the excitonic absorption and decreases the exciton lifetime via screening the electron-hole Coulomb interaction. By varying the deposition temperature from room temperature up to 300 °C (SZO-3), there is no change in excitonic absorption. Then, annealing of SZO-3 at 600 °C under oxygen environment (SZO-6) strongly improves the excitonic absorption as well as its lifetime. Critical point analysis on SZO-6 sample clearly reveals the excitonic transition at 3.38 eV and exciton-phonon complexes at 3.66 eV. Thus, the result is important to improve the functionality of doped ZnO with strong excitonic absorption for optoelectronic applications. © 2018 Elsevier B.V.
Department of Physics, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Ganesha 10, Bandung, 40132, Indonesia; Materials Engineering Program, Institut Teknologi Sumatera, Terusan Ryacudu, Way Hui, Jati Agung, Lampung, 35365, Indonesia; College of Science and Technology, Nihon University, Chiyoda, Tokyo, 101-0062, Japan; Department of Physics, Faculty of Science, National University of Singapore, 117542, Singapore; Singapore Synchrotron Light Source, National University of Singapore, 117603, Singapore; NUSNNI-NanoCore, National University of Singapore, 117576, Singapore; NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, 117456, Singapore; Department of Renewable Energy Engineering, Prasetiya Mulya University, Kavling Edutown I.1, BSD Raya Utama, BSD City, Tangerang, 15339, Indonesia; CNRS International NTU THALES Research Alliances/UMI 3288 (CINTRA), Research Techno Plaza, 50 Nanyang Drive, Border X Block, Level 6, Singapore, 637553, Singapore
Research at a Glance
Register to unlock
Topics & SDG Alignment
Register to unlock
Collaboration
Register to unlock
Author Profile (Selected)
Register to unlock
References Overview
Register to unlock
Journal & Source
Register to unlock
Metadata & Integrity
Register to unlock