E. Nurfani, W.A.P. Kesuma, A. Lailani, M.S. Anrokhi, G.T.M. Kadja, M. Rozana, W.S. Sipahutar, M.F. Arif
Understanding a mechanism behind photosensitivity in oxide materials is important to realize future photodetector devices. We have studied electrical properties of ZnO:Cu (0-2.5 at.%) films deposited by a spray technique. Here, Ag-ZnO-Ag planar configuration was used to study the Schottky barrier. Using current-voltage (I-V) characterization, a significant increment in the photocurrent is observed in all samples, indicating a photosensitivity behavior. The Schottky barrier is clearly observed in the doped sample. The Cu concentration of 1.5 at.% show the highest Schottky barrier height (0.8 eV), which may be originated from carrier trapping under dark and carrier de-trapping under ultraviolet radiation. Thus, our result is essential to improve the functionality of ZnO for photodetector applications. © 2020 Published under licence by IOP Publishing Ltd.
Department of Materials Engineering, Institut Teknologi Sumatera, Lampung, 35365, Indonesia; Department of Physics, Institut Teknologi Sumatera, Terusan Ryacudu, Lampung, 35365, Indonesia; Division of Inorganic and Physical Chemistry, Institut Teknologi Bandung, Ganesha 10, Bandung, 40132, Indonesia; Research Center for Nanosciences and Nanotechnology, Institut Teknologi Bandung, Ganesha 10, Bandung, 40132, Indonesia; Center for Catalysis and Reaction Engineering, Institut Teknologi Bandung, Ganesha 10, Bandung, 40132, Indonesia; Research Unit for Clean Technology, Indonesian Institute of Sciences, Bandung, 40135, Indonesia
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