Andam Deatama Refino, Nursidik Yulianto, Iqbal Syamsu, Andika Pandu Nugroho, Naufal Hanif Hawari, Alina Syring, Evvy Kartini, Ferry Iskandar, Tobias Voss, Afriyanti Sumboja, Erwin Peiner, Hutomo Suryo Wasisto
Production of high-aspect-ratio silicon (Si) nanowire-based anode for lithium ion batteries is challenging particularly in terms of controlling wire property and geometry to improve the battery performance. This report demonstrates tunable optimization of inductively coupled plasma reactive ion etching (ICP-RIE) at cryogenic temperature to fabricate vertically-aligned silicon nanowire array anodes with high verticality, controllable morphology, and good homogeneity. Three different materials [i.e., photoresist, chromium (Cr), and silicon dioxide (SiO2)] were employed as masks during the subsequent photolithography and cryogenic ICP-RIE processes to investigate their effects on the resulting nanowire structures. Silicon nanowire arrays with a high aspect ratio of up to 22 can be achieved by tuning several etching parameters [i.e., temperature, oxygen/sulfur hexafluoride (O2/SF6) gas mixture ratio, chamber pressure, plasma density, and ion energy]. Higher compressive stress was revealed for longer Si wires by means of Raman spectroscopy. Moreover, an anisotropy of lattice stress was found at the top and sidewall of Si nanowire, indicating compressive and tensile stresses, respectively. From electrochemical characterization, half-cell battery integrating ICP-RIE-based silicon nanowire anode exhibits a capacity of 0.25 mAh cm−2 with 16.67% capacity fading until 20 cycles, which has to be improved for application in future energy storage devices. © 2021, The Author(s).
Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, Hans-Sommer-Straße 66, Braunschweig, 38106, Germany; Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Langer Kamp 6, Braunschweig, 38106, Germany; Engineering Physics Program, Institut Teknologi Sumatera (ITERA), Jl. Terusan Ryacudu, Way Huwi, Lampung Selatan, Lampung, 35365, Indonesia; Research Center for Physics, National Research and Innovation Agency (BRIN), Jl. Kawasan Puspiptek No. 441-442, South Tangerang, 15314, Indonesia; Research Center for Electronics and Telecommunication, National Research and Innovation Agency (BRIN), Jl. Sangkuriang-Komplek LIPI Gedung 20, Bandung, 40135, Indonesia; Material Science and Engineering Research Group, Faculty of Mechanical and Aerospace Engineering, Institut Teknologi Bandung, Jl. Ganesha 10, Bandung, 40132, Indonesia; Center for Science and Technology of Advanced Materials, National Nuclear Energy Agency (BATAN), South Tangerang, 15314, Indonesia; Department of Physics, Faculty of Mathematics and Natural Science, Institut Teknologi Bandung, Jl. Ganesha 10, Bandung, 40132, Indonesia; PT Nanosense Instrument Indonesia, Umbulharjo, 55167, Yogyakarta, Indonesia
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